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Spin helical states and spin transport of the line defect in silicene lattice

机译:旋转螺旋状态和硅的线缺陷的自旋输运   格子

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摘要

We investigated the electronic structure of a silicene-like lattice with aline defect under the consideration of spin-orbit coupling. In the bulk energygap, there are defect related bands corresponding to spin helical stateslocalized beside the defect line: spin-up electrons flow forward on one sidenear to the line defect and move backward on the other side, and vice verse forspin-down electrons. When the system is subjected to random distribution ofspin-flipping scatterers, electrons suffer much less spin-flipped scatteringwhen they transport along the line defect than in the bulk. An electric gateabove the line defect can tune the spin-flipped transmission, which makes theline defect as a spin-controllable waveguide.
机译:在自旋轨道耦合的考虑下,我们研究了具有线缺陷的类硅烯晶格的电子结构。在体能隙中,存在与缺陷相关的能带,它们对应于位于缺陷线旁边的自旋螺旋状态:自旋电子在靠近线缺陷的一侧向前流动,而在另一侧向后移动,而对于自旋电子则相反。当系统经受自旋翻转散射体的随机分布时,电子沿线缺陷传输时比在整体中遭受的自旋翻转散射少得多。线路缺陷上方的电闸可以调整自旋翻转传输,这使线路缺陷成为可自旋控制的波导。

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